deep level transient spectroscopy (dlts) (Verlag GmbH)
90
Structured Review
Verlag GmbH
deep level transient spectroscopy (dlts)
Deep Level Transient Spectroscopy (Dlts), supplied by Verlag GmbH, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/deep+level+transient+spectroscopy+(dlts)/deep+level+transient+spectroscopy++dlts+/10__1002_slash_pssc__200461507-59-8-3
Average 90 stars, based on 1 article reviews
Deep Level Transient Spectroscopy (Dlts), supplied by Verlag GmbH, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/deep+level+transient+spectroscopy+(dlts)/deep+level+transient+spectroscopy++dlts+/10__1002_slash_pssc__200461507-59-8-3
Average 90 stars, based on 1 article reviews
deep level transient spectroscopy (dlts) - by Bioz Stars,
2026-09
90/100 stars
Images
Related Articles
Spectroscopy:Article Title: Deep levels in KOH etched and MOCVD regrown GaN p-n junctions Article Snippet: Threading dislocations continue to challenge the functionality and reliability of GaN based devices.. This work investigates the selective etching of threading dislocations in a GaN template grown by metalorganic chemical vapor deposition (MOCVD), and subsequent regrowth as a method to reduce the dislocation density.. A 2.0 μm template layer was grown first, followed by either 2 second or 30 second etching of the GaN in KOH, followed by regrowth of 2 μm of GaN and 0.2 μm of p-type GaN. Concentration Assay:Article Title: Deep levels in KOH etched and MOCVD regrown GaN p-n junctions Article Snippet: Threading dislocations continue to challenge the functionality and reliability of GaN based devices.. This work investigates the selective etching of threading dislocations in a GaN template grown by metalorganic chemical vapor deposition (MOCVD), and subsequent regrowth as a method to reduce the dislocation density.. A 2.0 μm template layer was grown first, followed by either 2 second or 30 second etching of the GaN in KOH, followed by regrowth of 2 μm of GaN and 0.2 μm of p-type GaN. |